VBsemi Elec · FETs & Power MOSFETs · MPN VBZM75N03
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| Gate Charge(Qg) | 171nC@10V;81.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 725pF |
| Current - Continuous Drain(Id) | 28.8A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.75W |
| Reverse Transfer Capacitance (Crss@Vds) | 370pF |
| RDS(on) | 3mΩ@10V;4mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.1nF |
| Type | N-Channel |
N-Channel 30V 28.8A 3.75W Through Hole TO-220AB