VBsemi Elec · FETs & Power MOSFETs · MPN VBZM20N65S
No reviews yet — be the first to review VBsemi Elec VBZM20N65S.
| Configuration | - |
|---|---|
| Gate Charge(Qg) | 71nC@10V |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 105pF |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 190mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.322nF |
N-Channel 650V 13A 208W Through Hole TO-220AB