VBsemi Elec VBZM150N03

VBsemi Elec · FETs & Power MOSFETs · MPN VBZM150N03

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Specifications

Gate Charge(Qg)81.5nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)1.725nF
Current - Continuous Drain(Id)140A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3.75W
Reverse Transfer Capacitance (Crss@Vds)970pF
RDS(on)2mΩ@10V;2.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)8.4nF
TypeN-Channel

Technical details

N-Channel 30V 140A 3.75W Through Hole TO-220AB

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