VBsemi Elec · FETs & Power MOSFETs · MPN VBZM13N50
4.0/5 from 1 engineer review.
| Gate Charge(Qg) | 81nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 290pF |
| Current - Continuous Drain(Id) | 8.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 660mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.91nF |
| Type | N-Channel |
N-Channel 500V 8.1A 250W Through Hole TO-220AB