VBsemi Elec VBZM120N15

VBsemi Elec · FETs & Power MOSFETs · MPN VBZM120N15

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Specifications

Gate Charge(Qg)63nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)535pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)8.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.425nF
TypeN-Channel

Technical details

N-Channel 150V 100A 375W Through Hole TO-220AB

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