VBsemi Elec · FETs & Power MOSFETs · MPN VBZM100N04
No reviews yet — be the first to review VBsemi Elec VBZM100N04.
| Gate Charge(Qg) | 120nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 650pF |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 312W |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF |
| RDS(on) | 2mΩ@10V;15mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9nF |
| Type | N-Channel |
N-Channel 40V 180A 312W Through Hole TO-220AB