VBsemi Elec · FETs & Power MOSFETs · MPN VBZFB80N03
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| Gate Charge(Qg) | 170nC@10V;81.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 710pF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF |
| RDS(on) | 3.5mΩ@10V;4.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3nF |
| Type | N-Channel |
N-Channel 30V 100A 250W Through Hole TO-251