VBsemi Elec VBZFB40N03

VBsemi Elec · FETs & Power MOSFETs · MPN VBZFB40N03

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Specifications

Gate Charge(Qg)19nC@15V
Drain to Source Voltage30V
Output Capacitance(Coss)200pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)7mΩ@10V;9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.7nF
TypeN-Channel

Technical details

N-Channel 30V 50A Through Hole TO-251

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