VBsemi Elec · FETs & Power MOSFETs · MPN VBZE80P03
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| Gate Charge(Qg) | 16nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 1.5nF |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 187W |
| Reverse Transfer Capacitance (Crss@Vds) | 715pF |
| RDS(on) | 9mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.9nF |
| Type | P-Channel |
P-Channel 30V 65A 187W Surface Mount TO-252