VBsemi Elec VBZE40P03

VBsemi Elec · FETs & Power MOSFETs · MPN VBZE40P03

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Specifications

Gate Charge(Qg)15nC@10V;13nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)145pF
RDS(on)18mΩ@10V;25mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.455nF
TypeP-Channel

Technical details

P-Channel 30V 40A 140W Surface Mount TO-252

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