VBsemi Elec VBZE20N06

VBsemi Elec · FETs & Power MOSFETs · MPN VBZE20N06

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Specifications

Gate Charge(Qg)11nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)140pF
Current - Continuous Drain(Id)46A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)23mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)670pF
TypeN-Channel

Technical details

N-Channel 60V 46A 100W Surface Mount TO-252

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