VBsemi Elec · FETs & Power MOSFETs · MPN VBZE100P03
No reviews yet — be the first to review VBsemi Elec VBZE100P03.
| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 1.565nF |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 187W |
| Reverse Transfer Capacitance (Crss@Vds) | 715pF |
| RDS(on) | 5mΩ@10V;7mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 8nF |
| Type | P-Channel |
P-Channel 30V 110A 187W Surface Mount TO-252