VBsemi Elec · FETs & Power MOSFETs · MPN VBZC8810
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| Gate Charge(Qg) | 12nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 7.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 14mΩ@4.5V;16mΩ@2.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
N-Channel Array 20V 7.6A 1W Surface Mount TSSOP-8