VBsemi Elec VBZA9945

VBsemi Elec · FETs & Power MOSFETs · MPN VBZA9945

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation4W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)27mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)600pF
TypeN-Channel

Technical details

N-Channel Array 60V 8A 4W Surface Mount SO-8

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