VBsemi Elec VBZA8858

VBsemi Elec · FETs & Power MOSFETs · MPN VBZA8858

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Specifications

Gate Charge(Qg)13nC;12nC
Drain to Source Voltage30V
Output Capacitance(Coss)755pF;800pF
Current - Continuous Drain(Id)11A;8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V;900mV
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)254pF;25pF
RDS(on)11mΩ@10V;21mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.7nF;1.515nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 30V 3W Surface Mount SO-8

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