VBsemi Elec VBZ3442

VBsemi Elec · FETs & Power MOSFETs · MPN VBZ3442

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Specifications

Gate Charge(Qg)2.9nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)22pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)246mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)190pF
TypeN-Channel

Technical details

N-Channel 100V 2A 1.6W Surface Mount SOT-23(TO-236)

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