VBsemi Elec · FETs & Power MOSFETs · MPN VBQG1201K
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| Output Capacitance(Coss) | 53pF |
|---|---|
| Pd - Power Dissipation | 3.1W |
| Configuration | - |
| Drain to Source Voltage | 200V |
| Gate Charge(Qg) | 8.2nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| RDS(on) | 1.2Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 140pF |
3.1W 200V 2V 1.2Ω@10V 1 N-channel N-Channel DFN-6(2x2) Single FETs, MOSFETs RoHS