VBsemi Elec · FETs & Power MOSFETs · MPN VBQF4338
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| Gate Charge(Qg) | 14nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 6.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.8pF |
| RDS(on) | 38mΩ@10V;60mΩ@4.5V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | - |
| Type | P-Channel |
30V 6.4A 1V 2.8W 2 P-Channel P-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS