VBsemi Elec · FETs & Power MOSFETs · MPN VBQF3638
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| Output Capacitance(Coss) | 435pF |
|---|---|
| Pd - Power Dissipation | 22W |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Gate Charge(Qg) | 7.1nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 28mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.5nF |
22W 60V 1.2V 28mΩ@10V 2 N-Channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS