VBsemi Elec · FETs & Power MOSFETs · MPN VBQF3310G
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| Output Capacitance(Coss) | 257pF |
|---|---|
| Pd - Power Dissipation | 56W |
| Configuration | - |
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 15nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| RDS(on) | 9mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 900pF |
56W 30V 1V 9mΩ@10V 2 N-Channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS