VBsemi Elec · FETs & Power MOSFETs · MPN VBQF2610N
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| Output Capacitance(Coss) | 130pF |
|---|---|
| Pd - Power Dissipation | 38.5W |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Gate Charge(Qg) | 36nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 120mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1nF |
38.5W 60V 1V 120mΩ@10V 1 P-Channel P-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS