VBsemi Elec VBQA1606

VBsemi Elec · FETs & Power MOSFETs · MPN VBQA1606

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Specifications

Gate Charge(Qg)47nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)470pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)225pF
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.65nF
TypeN-Channel

Technical details

N-Channel 60V 80A Surface Mount DFN5x6-8

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