VBsemi Elec · FETs & Power MOSFETs · MPN VBP2205N
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 61nC@10V |
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 590pF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 180W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 50mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.9nF |
P-Channel 200V 55A 180W Through Hole TO-247AC