VBsemi Elec · FETs & Power MOSFETs · MPN VBMB2102M
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| Gate Charge(Qg) | 23.2nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 8.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2.5W |
| RDS(on) | 220mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.055nF |
| Type | P-Channel |
100V 8.6A 2.5V 2.5W 220mΩ@10V 1 P-Channel P-Channel TO-220F-3 Single FETs, MOSFETs RoHS