VBsemi Elec · FETs & Power MOSFETs · MPN VBMB185R05
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| Gate Charge(Qg) | 28nC@10V |
|---|---|
| Drain to Source Voltage | 850V |
| Output Capacitance(Coss) | 68pF |
| Current - Continuous Drain(Id) | 3.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 2.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 816pF |
| Type | N-Channel |
N-Channel 850V 3.9A 45W Through Hole TO-220F