VBsemi Elec VBMB17R07

VBsemi Elec · FETs & Power MOSFETs · MPN VBMB17R07

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage700V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)1.36Ω@10V
Number1 N-channel
Input Capacitance(Ciss)820pF
TypeN-Channel

Technical details

N-Channel 700V 7A 31W Through Hole TO-220F

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