VBsemi Elec VBMB16R43S

VBsemi Elec · FETs & Power MOSFETs · MPN VBMB16R43S

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Specifications

Gate Charge(Qg)7.8nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)43A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation220W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)60mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.6nF
TypeN-Channel

Technical details

N-Channel 600V 43A 220W Through Hole TO-220F

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