VBsemi Elec · FETs & Power MOSFETs · MPN VBMB155R18
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| Gate Charge(Qg) | 150nC@10V |
|---|---|
| Drain to Source Voltage | 550V |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 260mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.094nF |
N-Channel 550V 11A 60W Through Hole TO-220F