VBsemi Elec VBMB1302

VBsemi Elec · FETs & Power MOSFETs · MPN VBMB1302

No reviews yet — be the first to review VBsemi Elec VBMB1302.

Specifications

Gate Charge(Qg)81.5nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)28.8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3.75W
Reverse Transfer Capacitance (Crss@Vds)270pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)6.7nF

Technical details

N-Channel 30V 28.8A 3.75W Through Hole TO-220F

Related FETs & Power MOSFETs