VBsemi Elec VBMB1204N

VBsemi Elec · FETs & Power MOSFETs · MPN VBMB1204N

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Specifications

Gate Charge(Qg)85nC@15V
Drain to Source Voltage200V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)135pF
RDS(on)38mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.1nF
TypeN-Channel

Technical details

N-Channel 200V 45A 55W Through Hole TO-220F

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