VBsemi Elec VBM2625

VBsemi Elec · FETs & Power MOSFETs · MPN VBM2625

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Specifications

Gate Charge(Qg)78nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)390pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation66.7W
Reverse Transfer Capacitance (Crss@Vds)290pF
RDS(on)19mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.7nF
TypeP-Channel

Technical details

P-Channel 60V 50A 66.7W Through Hole ITO-220AB-3

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