VBsemi Elec VBM2609

VBsemi Elec · FETs & Power MOSFETs · MPN VBM2609

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)240nC@10V
Output Capacitance(Coss)975pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)760pF
RDS(on)9.4mΩ@4.5V
Input Capacitance(Ciss)9.2nF
TypeP-Channel

Technical details

P-Channel 60V 90A 250W Through Hole TO-220AB

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