VBsemi Elec · FETs & Power MOSFETs · MPN VBM2124N
No reviews yet — be the first to review VBsemi Elec VBM2124N.
| Gate Charge(Qg) | 96nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 120V |
| Output Capacitance(Coss) | 301pF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 113W |
| Reverse Transfer Capacitance (Crss@Vds) | 208pF |
| RDS(on) | 38mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6nF |
P-Channel 120V 55A 113W Through Hole TO-220AB