VBsemi Elec · FETs & Power MOSFETs · MPN VBM165R12S
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| Gate Charge(Qg) | 70nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 80pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 210W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 360mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.1nF |
| Type | N-Channel |
N-Channel 650V 12A 210W Through Hole TO-220AB