VBsemi Elec VBM15R08

VBsemi Elec · FETs & Power MOSFETs · MPN VBM15R08

No reviews yet — be the first to review VBsemi Elec VBM15R08.

Specifications

Gate Charge(Qg)49nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation170W
Reverse Transfer Capacitance (Crss@Vds)7.1pF
RDS(on)1.1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.4nF
TypeN-Channel

Technical details

N-Channel 500V 8A 170W Through Hole ITO-220AB-3

Related FETs & Power MOSFETs