VBsemi Elec · FETs & Power MOSFETs · MPN VBM1204N
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 85nC@15V |
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 300pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 46mΩ@15V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3nF |
N-Channel 200V 50A Through Hole TO-220AB