VBsemi Elec VBL16R31SFD

VBsemi Elec · FETs & Power MOSFETs · MPN VBL16R31SFD

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Specifications

Gate Charge(Qg)82nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)31A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation170W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)90mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.3nF
TypeN-Channel

Technical details

N-Channel 600V 31A 170W Surface Mount TO-263(D2Pak)

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