VBsemi Elec · FETs & Power MOSFETs · MPN VBL165R12
No reviews yet — be the first to review VBsemi Elec VBL165R12.
| Gate Charge(Qg) | 48nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 70pF |
| Current - Continuous Drain(Id) | 9.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 156W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 650mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 800pF |
| Type | N-Channel |
N-Channel 650V 9.4A 156W Surface Mount TO-263(D2Pak)