VBsemi Elec · FETs & Power MOSFETs · MPN VBL1208N
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 35nC@10V |
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 300pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 48mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.82nF |
N-Channel 200V 40A 200W Surface Mount TO-263(D2PAK)