VBsemi Elec · FETs & Power MOSFETs · MPN VBJ2102M
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| Gate Charge(Qg) | 17.5nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 51pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 6.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| RDS(on) | 200mΩ@10V;230mΩ@6V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 819pF |
P-Channel 100V 30A 6.5W Surface Mount SOT-223