VBsemi Elec VBI1314

VBsemi Elec · FETs & Power MOSFETs · MPN VBI1314

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)8.7A
Output Capacitance(Coss)120pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation6.3W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)18mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)710pF
TypeN-Channel

Technical details

N-Channel 30V 8.7A 6.3W Surface Mount SOT-89

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