VBsemi Elec · FETs & Power MOSFETs · MPN VBI1201K
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| Gate Charge(Qg) | 8.2nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 53pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 800mΩ@10V |
| Input Capacitance(Ciss) | 140pF |
| Type | N-Channel |
N-Channel 200V 2A 3.1W Surface Mount SOT-89