VBsemi Elec · FETs & Power MOSFETs · MPN VBGQA1102N
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| Gate Charge(Qg) | 55nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 470pF |
| Current - Continuous Drain(Id) | 27A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF |
| RDS(on) | 26mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.3nF |
| Type | N-Channel |
N-Channel 100V 27A Surface Mount DFN5x6-8