VBsemi Elec VBGE1105

VBsemi Elec · FETs & Power MOSFETs · MPN VBGE1105

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)80nC
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation150W
RDS(on)6mΩ@10V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 100V 85A 150W Surface Mount TO-252

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