VBsemi Elec · FETs & Power MOSFETs · MPN VBGE1102N
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| Gate Charge(Qg) | 76nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 35A |
| Output Capacitance(Coss) | 246pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 21mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.6nF |
| Type | N-Channel |
N-Channel 100V 35A 150W Surface Mount TO-252