VBsemi Elec · FETs & Power MOSFETs · MPN VBE2610N
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| Gate Charge(Qg) | 10nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 120pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 34W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 61mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1nF |
| Type | P-Channel |
P-Channel 60V 30A 34W Surface Mount TO-252