VBsemi Elec VBE2309

VBsemi Elec · FETs & Power MOSFETs · MPN VBE2309

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Specifications

Gate Charge(Qg)240nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)1.565nF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)715pF
RDS(on)11mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)4nF
TypeP-Channel

Technical details

P-Channel 30V 70A 78W Surface Mount TO-252

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