VBsemi Elec · FETs & Power MOSFETs · MPN VBC9P3033
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| Output Capacitance(Coss) | - |
|---|---|
| Pd - Power Dissipation | 830mW |
| Gate Charge(Qg) | 13nC |
| Configuration | - |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 36mΩ@10V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | - |
830mW 30V 1V 36mΩ@10V 2 P-Channel P-Channel TSSOP-8 Single FETs, MOSFETs RoHS