VBsemi Elec · FETs & Power MOSFETs · MPN VBC8338
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| Gate Charge(Qg) | 11nC |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 105pF;190pF |
| Current - Continuous Drain(Id) | 6.2A;5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.35W |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 45mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 550pF;960pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 30V 6.2A 5A 1.35W Surface Mount TSSOP-8