VBsemi Elec · FETs & Power MOSFETs · MPN VBC6P3033
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| Gate Charge(Qg) | 13nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 5.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 850mW |
| RDS(on) | 36mΩ@10V;55mΩ@4.5V |
| Number | 2 P-Channel |
| Type | P-Channel |
P-Channel 30V 5.2A 850mW Surface Mount TSSOP-8